NDT3055 transistor equivalent, n-channel enhancement mode field effect transistor.
* 4 A, 60 V
* RDS(ON) = 0.100 W @ VGS = 10 V
* High Density Cell Design for Extremely Low RDS(ON)
* High Power and Current Handling Capability in a Widely.
such as DC motor control and DC/DC conversion where fast switching, low in−line power loss, and resistance to transients.
These N−Channel enhancement mode power field effect transistors
are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance and provide superior sw.
Image gallery
TAGS
Download (Size : 197.27KB)